Semiconductor light emitting component and method for manufacturing the same

ABSTRACT

A method for manufacturing a semiconductor light emitting component is disclosed in the present invention. First, a substrate is provided and an epitaxial structure is formed thereon, wherein a first surface of the epitaxial structure contacts the substrate. The epitaxial structure includes a first type doped layer, a light emitting portion and a second type doped layer. A first electrode is then formed on a second surface of the first type doped layer. Subsequently, a functional structure is formed on the first electrode using an in-situ method. Afterwards, the substrate is removed to expose the epitaxial structure. Finally, an etching step is performed to etch the exposed epitaxial structure, so as to expose at least a portion of the first electrode.

FIELD OF THE INVENTION

The present invention relates to a light emitting element, and moreparticularly to a semiconductor light emitting component and method formanufacturing the same.

BACKGROUND OF THE INVENTION

FIG. 1A illustrates a schematic view of a conventional horizontal lightemitting diode. Referring to FIG. 1A, the horizontal light emittingdiode 1 includes an epitaxial substrate 11, an epitaxial structure 12grown from the epitaxial substrate 11 by an epitaxy growth process, andan electrode unit 13 disposed on the epitaxial structure 12 forproviding electrical energy. The epitaxial substrate 11 is made of amaterial such as sapphire or SiC so that an epitaxial growth of agallium-nitride-based (GaN-based) semiconductor material can be achievedon the epitaxial substrate 11.

The epitaxial structure 12 is usually made of the GaN-basedsemiconductor material. During the epitaxy growth process, the GaN-basedsemiconductor material epitaxially grows up from the epitaxial substrate11 to form an n-type doped layer 121 and a p-type doped layer 122. Whenthe electrical energy is applied to the epitaxial structure 12, a lightemitting portion 123 at a junction of the n-type doped layer 121 and thep-type doped layer 122 will generate an electron-hole capturephenomenon. As a result, the electrons of the light emitting portion 123will fall to a lower energy level and release energy with a photon mode.In one embodiment, the light emitting portion 123 is a multiple quantumwell (MQW) structure capable of restricting a spatial movement of theelectrons and the holes. Thus, a collision probability of the electronsand the holes is increased so that the electron-hole capture phenomenonoccurs easily, thereby enhancing lighting emitting efficiency.

The electrode unit 13 includes a first electrode 131 and a secondelectrode 132. The first electrode 131 and the second electrode 132 arerespectively in an ohmic contact with the n-type doped layer 121 and thep-type doped layer 122 and configured to provide electrical energy tothe epitaxial structure 12. When a voltage is applied between the firstelectrode 131 and the second electrode 132, an electric current flowsfrom the second electrode 132 to the first electrode 131 thru theepitaxial substrate 11 and is horizontally distributed in the epitaxialstructure 12. Thus, a number of photons are generated by a photoelectriceffect in the epitaxial structure 12. The horizontal light emittingdiode 1 emits light from the epitaxial structure 12 due to thehorizontally distributed electric current.

A manufacturing process of the horizontal light emitting diode issimple. However, the substrate of the horizontal light emitting diode ismostly a non-conductive sapphire substrate, with a positive electrodeand a negative electrode of the horizontal light emitting diode 1located on the same side (i.e., a co-planar electrodes configuration).In the horizontal light emitting diode 1 with the co-planar electrodesconfiguration, the electric current is non-uniform, which can cause acurrent crowding problem, a non-uniformity light emitting problem and athermal accumulation problem, etc. As a result, the light emittingefficiency of the horizontal light emitting diode can be decreased, andeven the horizontal light emitting diode can become damaged.

Generally, the current crowding problem can be reduced by improving theconfiguration of the electrodes or by changing the geometric shapes ofthe electrodes. For example, by extending the lengths of a P electrodeand an N electrode, the current path from the P electrode to the Nelectrode is increased to avoid over crowding in the current path.

Referring to FIG. 1B, a conventional finger-shaped electrodesconfiguration is shown. The finger-shaped electrodes configurationimproves the uniformity of the electric current by extending the lengthsof the electrodes over the surface of the configuration. It should beappreciated that the more interdigitated structures the finger-shapedelectrodes configuration has, the more uniformly the electric currentdistributes. However, too much interdigitated structures will cause areduction of a light output area because of a shading effect. Toovercome such shading effect, vertical light emitting diodes have beendeveloped.

FIG. 2 illustrates a schematic view of a conventional vertical lightemitting diode 2. The conventional vertical light emitting diode 2includes an epitaxial structure 22 and an electrode unit 23 disposed onthe epitaxial structure 22 for providing electrical energy. Similar tothe diode of FIG. 1, the epitaxial structure 22 can be made of aGaN-based semiconductor material by an epitaxy growth process. Duringthe epitaxy growth process, the GaN-based semiconductor materialepitaxially grows up from an epitaxial substrate (not shown) to form ann-type doped layer 221, an MQW structure 223 and a p-type doped layer222. Then, the electrode unit 23 is bonded to the epitaxial structure 22after stripping the epitaxial substrate. The electrode unit 23 includesa first electrode 231 and a second electrode 232. The first electrode231 and the second electrode 232 are respectively in ohmic contact withthe n-type doped layer 221 and the p-type doped layer 222. In addition,the second electrode 232 can adhere to a heat dissipating substrate 24so as to increase the heat dissipation efficiency. When a voltage isapplied between the first electrode 231 and the second electrode 232, anelectric current vertically flows. Thus, the conventional vertical lightemitting diode 2 can effectively improve the current crowding problem,the non-uniformity light emitting problem and the thermal accumulationproblem of the conventional horizontal light emitting diode 1. However,the shading effect of the electrodes still exists in the conventionalvertical light emitting diode 2, which causes a reduction of the lightemitting area. Furthermore, a manufacturing process of the conventionalvertical light emitting diode 2 is complicated. For example, theepitaxial structure 22 is prone to be damaged by high heat when adheringthe second electrode 232 to the heat dissipating substrate 24.

In view of the problems discussed above with reference to FIG. 1 andFIG. 2, what is needed is a method for manufacturing a semiconductorlight emitting component and a semiconductor light emitting componentapplied to a light emitting diode so as to overcome the abovedisadvantages of the conventional horizontal light emitting diode andthe conventional vertical light emitting diode.

SUMMARY OF THE INVENTION

The present invention provides a method for manufacturing asemiconductor light emitting component. First, a substrate is provided,and an epitaxial structure is formed thereon, wherein a first surface ofthe epitaxial structure contacts the substrate. The epitaxial structureincludes a first type doped layer, a light emitting portion and a secondtype doped layer. A first electrode is then formed on a second surfaceof the first type doped layer. Subsequently, a functional structure isformed on the first electrode using an in-situ method. Afterwards, thesubstrate is removed to expose the epitaxial structure. Finally, anetching step is performed to etch the exposed epitaxial structure, so asto further expose at least a portion of the first electrode.

In one embodiment of the present invention, the first type doped layerhas the first surface to contact the substrate, and the first surface isopposite to the second surface.

In one embodiment of the present invention, the epitaxial structurefurther comprises a contacting layer, disposed between the first typedoped layer and the substrate, comprises one or any combination selectedfrom the group consisting of undoped layer, buffer layer, and superlattice layer.

In one embodiment of the present invention, the contacting layer has thefirst surface to contact the substrate.

In one embodiment of the present invention, the step of removing thesubstrate is to expose the first surface of the epitaxial structure, andthe step of etching the exposed epitaxial structure is from the firstsurface.

In one embodiment of the present invention, the step of removing thesubstrate also roughens the epitaxial structure, so as to expose aroughened epitaxial structure, before the following etching step.

In one embodiment of the present invention, after the step of removingthe substrate, the method for manufacturing a semiconductor lightemitting component further comprises a roughing step to roughen theexposed epitaxial structure, so as to form a roughened epitaxialstructure, before the following etching step.

In one embodiment of the present invention, the method for manufacturinga semiconductor light emitting component further includes forming asecond electrode on a third surface of the second type doped layer.

In one embodiment of the present invention, the method for manufacturinga semiconductor light emitting component further includes etching theepitaxial structure to expose at least a portion of the secondelectrode.

In one embodiment of the present invention, the first type doped layeris an n-type layer and the second type doped layer is a p-type layer.

In one embodiment of the present invention, the first type doped layeris a p-type layer and the second type doped layer is an n-type layer.

In one embodiment of the present invention, the step of forming thefunctional structure includes sub-steps as follows: forming aninsulating layer on the first electrode; forming a reflective layer onthe insulating layer; forming a seed layer on the reflective layer; andforming a permanent layer on the seed layer; wherein the above-mentionedsub-steps of forming use the in-situ method.

In one embodiment of the present invention, the step of forming thefunctional structure includes sub-steps as follows: forming aninsulating layer on the first electrode; forming a reflective layer onthe insulating layer; and forming a permanent layer on the reflectivelayer; wherein the above-mentioned sub-steps of forming use the in-situmethod.

In one embodiment of the present invention, the step of forming thefunctional structure comprises sub-steps as follows: forming aninsulating reflective layer on the first electrode; and forming apermanent layer on the insulating reflective layer; wherein theabove-mentioned sub-steps of forming use the in-situ method.

In one embodiment of the present invention, the in-situ method comprisesone or any combination selected from the group consisting of physicalvapor deposition, chemical vapor deposition, electroplating andelectroless plating.

The present invention also provides a semiconductor light emittingcomponent including an epitaxial structure, a first electrode, afunctional structure and a first cutout structure. The epitaxialstructure includes a first type doped layer, a light emitting portionand a second type doped layer. The first electrode is formed on a firstsurface of the first type doped layer. The functional structure isformed on the first electrode using the in-situ method. The first cutoutstructure is formed in the first type doped layer to expose at least aportion of the first electrode.

In one embodiment of the present invention, the semiconductor lightemitting component further includes a second electrode formed on a thirdsurface of the second type doped layer.

In one embodiment of the present invention, the semiconductor lightemitting component further comprises a second cutout structure formed inthe first type doped layer, the light emitting portion and the secondtype doped layer to expose at least a portion of the second electrode.

In one embodiment of the present invention, the first type doped layeris an n-type layer and the second type doped layer is a p-type layer.

In one embodiment of the present invention, the first type doped layeris a p-type layer and the second type doped layer is an n-type layer.

In one embodiment of the present invention, the functional structureincludes an insulating layer formed on the first electrode using thein-situ method, a reflective layer formed on the insulating layer usingthe in-situ method, a seed layer formed on the reflective layer usingthe in-situ method, and a permanent layer formed on the seed layer usingthe in-situ method.

In one embodiment of the present invention, the functional structureincludes an insulating layer formed on the first electrode using thein-situ method, a reflective layer formed on the insulating layer usingthe in-situ method, and a permanent layer formed on the reflective layerusing the in-situ method.

In one embodiment of the present invention, the functional structureincludes an insulating reflective layer formed on the first electrodeusing the in-situ method and a permanent layer formed on the insulatingreflective layer using the in-situ method.

In the present invention, the functional structure can be directlyformed using the in-situ method, such as physical vapor deposition,chemical vapor deposition, electroplating or electroless plating. Inother words, the functional structure can be formed without anadditional adhering and assembling process. Thus, the method in thepresent embodiment is simpler than the conventional method.

BRIEF DESCRIPTION OF THE DRAWINGS

The above objects and advantages of the present invention will becomemore readily apparent to those ordinarily skilled in the art afterreviewing the following detailed description and accompanying drawings,in which:

FIG. 1A illustrates a schematic view of a conventional horizontal lightemitting diode.

FIG. 1B illustrates a schematic view of a conventional finger-shapedelectrodes configuration of a conventional horizontal light emittingdiode.

FIG. 2 illustrates a schematic view of a conventional vertical lightemitting diode.

FIG. 3A to FIG. 3G illustrate a process flow of a method formanufacturing a semiconductor light emitting component in accordancewith an embodiment of the present invention.

FIG. 4A illustrates a schematic view of an insulating layer of afunctional structure in accordance with an embodiment of the presentinvention.

FIG. 4B illustrates a schematic view of a semiconductor light emittingcomponent in accordance with an embodiment of the present invention.

FIG. 5A and FIG. 5B illustrate schematic views of a number of lightemitting diodes formed on a common permanent substrate in accordancewith an embodiment of the present invention.

FIG. 6 illustrates a schematic view of a semiconductor light emittingdiode in accordance with an embodiment of the present invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

The present invention will now be described more specifically withreference to FIG. 3 to FIG. 6. It should be appreciated that thefollowing descriptions of embodiments of this invention are presentedherein for purpose of illustration and description only. It is notintended to be exhaustive nor limited to the precise forms disclosed.

FIG. 3A to FIG. 3E illustrate a process flow of a method formanufacturing a semiconductor light emitting component 3 in accordancewith an embodiment of the present invention. Referring to FIG. 3A toFIG. 3E, at first, a substrate 30 is provided and an epitaxial structure301 is formed on the substrate 30, wherein a first surface 312 of theepitaxial structure 301 contacts the substrate 30. The epitaxialstructure 301 includes a first type doped layer 31, a light emittingportion 33 and a second type doped layer 32. A first electrode 34 isformed on a second surface 311 of the first type doped layer 31, and asecond electrode 35 is formed on a third surface 321 of the second typedoped layer 32. In one example, the first type doped layer 31 has thefirst surface 312 to contact the substrate 30, and the first surface 312is opposite to the second surface 311.

Referring to FIG. 3B, it is noted that the epitaxial structure 301 mayfurther comprises a contacting layer 31′, disposed between the firsttype doped layer 31 and the substrate 30, comprises one or anycombination selected from the group consisting of undoped layer, bufferlayer, and super lattice layer. In another example, the contacting layer31′ has the first surface 312′ to contact the substrate 30.

In the present embodiment, the substrate 30 can be, for example, asapphire epitaxial substrate or a SiC epitaxial substrate. The epitaxialstructure 301 is capable of achieving a basic structure of a lightemitting diode. The first type doped layer 31 can be an n-type layer,the second type doped layer 32 can be a p-type layer, and the lightemitting portion 33 is located at a junction of the first type dopedlayer 31 and the second type doped layer 32. The light emitting portion33 can be, for example, an MQW structure. It is noted that, the firsttype doped layer 31 can also be a p-type layer, and the second typedoped layer 32 is thus correspondingly an n-type layer.

Referring to FIGS. 3A and 3C, a functional structure 36 is formed on thefirst type doped layer 31, the second type doped layer 32, the firstelectrode 34 and the second electrode 35 using an in-situ method. Thefunctional structure 36 includes an insulating layer 361, a reflectivelayer 362, a seed layer 363 and a permanent substrate 364. First, theinsulating layer 361 is formed on the first type doped layer 31 and thefirst electrode 34. Then, the reflective layer 362 is formed on theinsulating layer 361, the second type doped layer 32, and the secondelectrode 35. Then, the seed layer 363 is formed on a surface of thereflective layer 362. Then, the permanent substrate 364 is formed on asurface of the seed layer 363. The insulating layer 361 can be, forexample, a silicon oxide layer. The reflective layer 362 can be, forexample, a titanium/aluminum (Ti/Al) metal layer or a titanium/silver(Ti/Ag) metal layer. The seed layer 363 can be, for example, a gold (Au)layer. In one embodiment, the thickness of the seed layer 363 isapproximately 150 nm. When the reflective layer 362 is electricallyconductive, the seed layer 363 can be formed by an electroplating or anelectroless plating process. The permanent substrate 364 can be made ofcopper by an electroplating process. A thickness of the permanentsubstrate 364 is in a range from 50 um to 100 um. Additional, thepermanent substrate 364 can be made of silicon oxide using an in-situchemical vapor deposition process.

Referring to FIG. 3D, the substrate 30 is removed from the epitaxialstructure by a laser lift-off (LLO) method or a chemical etchinglift-off (CLO) method. Additionally, the substrate removing step mayalso roughen the first surface 312, originally contacting the substrate,to form a first roughened surface 314, before the following etchingstep.

Referring to FIG. 3E, after the substrate 30 is removed, the entireremaining structure is then turned over 180 degrees. A first cutoutstructure 38 is formed by etching to remove a portion of a firstroughened surface 314 of the first type doped layer 31, thereby exposingat least a portion of a surface 341 of the first electrode 34.Subsequently, referring to FIG. 3F, the first roughened surface 314 ofthe first type doped layer 31 is further roughened to form a secondroughened surface 316, so as to increase light emitting efficiency. Itis noted that the steps according to FIGS. 3E and 3F may exchange.

When the reflective layer 362, the seed layer 363 and the permanentsubstrate 364 all are electrically conductive, the semiconductor lightemitting component 3 as shown in FIG. 3E is a vertical light emittingdiode.

It is noted that the first cutout structure 38 in the present embodimentis used for exposing at least a portion of the surface 341 of the firstelectrode 34. In actual practice, an area of the portion of the surface341 can be much less than an area of the first electrode 34. Asabove-mentioned, a light emitting diode has a length extension of the Pelectrode and a length extension of the N electrode to reduce thecurrent crowding problem. However, a large area electrode will cause ashading effect. In the present embodiment of the present invention, theepitaxial structure is etched in a small area after being turned over,thereby forming the first cutout structure 38 with a small area andexposing a portion of the surface 341 of the first electrode 34, andfurther achieving a subsequent electrical connection with the voltage.Therefore, the method of the present embodiment can manufacture a lightemitting diode with an ultra-low shade effect.

Referring to FIG. 3F, the portion of the surface 341 of the firstelectrode 34 can be etched by using a dry etching method. The firstroughened surface 314 can be further roughened to form the secondroughened surface 316 by using a phosphate solution at a temperature ofapproximately 130 celsius degrees or a sodium hydroxide solution at atemperature of approximately 80 celsius degrees.

Still referring to FIG. 3G, the permanent substrate 364 can be directlycontacted with a heat sink 37 so as to dissipate heat quickly.

As described above, the functional structure 36, including theinsulating layer 361, the reflective layer 362, the seed layer 363 andthe permanent substrate 364, can be formed directly using an in-situmethod, such as physical vapor deposition, chemical vapor deposition,electroplating or electroless plating. In other words, the functionalstructure 36 can be formed without an additional adhering and assemblingprocess. Thus, the method in the present embodiment is simpler thanconventional method. Additionally, the functional structure 36 can beadjusted according to the requirement. For example, the functionalstructure 36 can only contain the insulating layer 361, the reflectivelayer 362 and the permanent substrate 364 or only contain the insulatinglayer 361 and the permanent substrate 364. Since the reflective layer362 is mainly used as a mirror to increase the light emittingefficiency, the mirror can be achieved by a titanium/aluminum layer or atitanium/silver layer. For example, a thickness of the titanium layer isabout 10 nm and a thickness of the silver layer is about 300 nm. Thetitanium layer is configured for increasing adhesion. It is noted thatit is not necessary for the mirror to be electrically conductive. Themirror can also be an insulating reflective layer using a distributedBragg reflector (DBR) in other embodiments. Thus, a horizontal lightemitting diode can be formed by coupling with other structural designs.

FIG. 4A illustrates a schematic view of an insulating layer of afunctional structure 36 in accordance with another embodiment of thepresent invention. Referring to FIG. 4A, an insulating layer 361 of thefunctional structure 36 is further formed on the second type doped layer32 while the second electrode 35 is exposed from the insulating layer361. Additionally, FIG. 4B illustrates a schematic view of a functionalstructure. Referring to the FIG. 4B, when a reflective layer 362 is aconductor coupled with the second type doped layer 32, the secondelectrode 35 described in the foregoing embodiments can thus be omittedand the reflective layer 362 in ohmic contact with the second type dopedlayer 32 works as an electrode.

FIG. 5A and FIG. 5B illustrate schematic views of a number of lightemitting diodes formed on a common permanent substrate. Referring toFIG. 5A and FIG. 5B, each of the first electrodes 34 has a portion ofthe surface 341 exposed. An electrode 50 is provided to connect thefirst electrodes 34 in parallel so that the light emitting diodes on thecommon permanent substrate connect in parallel. Thus, a vertical lightemitting diode array with an ultra-low shade effect is provided.

FIG. 6 is a schematic view of a semiconductor light emitting diode inaccordance with another embodiment of the present invention. Referringto FIG. 6, a second cutout structure 60 is formed by removing a portionof the epitaxial structure 301 so as to expose at least a portion of asurface 351 of the second electrode 35. Specially, the first type dopedlayer 31, the light emitting portion 33 and the second type doped layer32 are etched from the first surface 312 to form the second cutoutstructure 60 to expose the portion of the surface of the secondelectrode 35. As above-mentioned, if the reflective layer 362 isreplaced by a DBR, the light emitting diode of this embodiment can bemade into a horizontal light emitting diode.

In sum, the light emitting diodes in the embodiments of the presentinvention at least have the following advantages: (1) vertical lightemitting diodes with an ultra-low shade effect can be obtained; (2) acircuit can be formed on a permanent substrate; (3) a reflective layercan function as a mirror, it can be in direct ohmic contact with thesecond type doped layer to work as an electrode, and it can be connectedwith the second type doped layer to transfer heat; (4) an insulatinglayer/reflective layer can form an omni-directional reflector (ODR) whena thickness of the insulating layer is equal to a light wavelength ofapproximately (4n); (5) compared to the manufacturing process offlip-chip structures, circuit alignment is not needed in the method ofthe present invention; and (6) the permanent substrate can directlycontact with the heat sink to transfer heat quickly.

While the invention has been described in terms of what is presentlyconsidered to be the most practical embodiments, it is to be understoodthat the invention need not be limited to the embodiment described.Rather, the above description is intended to cover various modificationsand similar arrangements included within the spirit and scope of theappended claims which are to be accorded with the broadestinterpretation so as to encompass all such modifications and similarstructures.

What is claimed is:
 1. A method for manufacturing a semiconductor light emitting component, comprising: providing a substrate; forming an epitaxial structure on the substrate, wherein a first surface of the epitaxial structure contacts the substrate, the epitaxial structure comprising a first type doped layer, a light emitting portion and a second type doped layer; forming a first electrode on a second surface of the first type doped layer; forming a functional structure on the first electrode using an in-situ method; removing the substrate to expose the epitaxial structure; and etching the exposed epitaxial structure, so as to further expose at least a portion of the first electrode.
 2. The method of claim 1, wherein the first type doped layer has the first surface to contact the substrate, and the first surface is opposite to the second surface.
 3. The method of claim 1, wherein the epitaxial structure further comprises a contacting layer, disposed between the first type doped layer and the substrate, comprises one or any combination selected from the group consisting of undoped layer, buffer layer, and super lattice layer.
 4. The method of claim 3, wherein the contacting layer has the first surface to contact the substrate.
 5. The method of claim 1, wherein said step of removing the substrate is to expose the first surface of the epitaxial structure, and said step of etching the exposed epitaxial structure is from the first surface.
 6. The method of claim 1, wherein said step of removing the substrate also roughing the epitaxial structure, so as to expose a roughened epitaxial structure, before the following etching step.
 7. The method of claim 1, after said step of removing the substrate, further comprises a roughing step to roughen the exposed epitaxial structure, so as to form a roughened epitaxial structure, before the following etching step.
 8. The method of claim 1, further comprising: forming a second electrode on a third surface of the second type doped layer.
 9. The method of claim 8, further comprising: etching the exposed epitaxial structure, so as to expose at least a portion of the second electrode.
 10. The method of claim 1, wherein the first type doped layer is an n-type layer and the second type doped layer is a p-type layer.
 11. The method of claim 1, wherein the first type doped layer is a p-type layer and the second type doped layer is an n-type layer.
 12. The method of claim 1, wherein said step of forming the functional structure comprises sub-steps as follows: forming an insulating layer on the first electrode; forming a reflective layer on the insulating layer; forming a seed layer on the reflective layer; and forming a permanent layer on the seed layer; wherein said sub-steps of forming use the in-situ method.
 13. The method of claim 1, wherein said step of forming the functional structure comprises sub-steps as follows: forming an insulating layer on the first electrode; forming a reflective layer on the insulating layer; and forming a permanent layer on the reflective layer; wherein said sub-steps of forming use the in-situ method.
 14. The method of claim 1, wherein said step of forming the functional structure comprises sub-steps as follows: forming an insulating reflective layer on the first electrode; and forming a permanent layer on the insulating reflective layer; wherein said sub-steps of forming use the in-situ method.
 15. The method of claim 1, wherein the in-situ method comprises one or any combination selected from the group consisting of physical vapor deposition, chemical vapor deposition, electroplating and electroless plating.
 16. A semiconductor light emitting component, comprising: an epitaxial structure comprising a first type doped layer, a light emitting portion and a second type doped layer; a first electrode formed on a first surface of said first type doped layer; a functional structure formed on said first electrode using an in-situ method; and a first cutout structure formed in said first type doped layer to expose at least a portion of the first electrode.
 17. The semiconductor light emitting component of claim 16, further comprising a second electrode formed on a third surface of said second type doped layer.
 18. The semiconductor light emitting component of claim 17, further comprising a second cutout structure formed in said first type doped layer, said light emitting portion and said second type doped layer so as to expose at least a portion of said second electrode.
 19. The semiconductor light emitting component of claim 16, wherein said first type doped layer is an n-type layer and said second type doped layer is a p-type layer.
 20. The semiconductor light emitting component of claim 16, wherein said first type doped layer is a p-type layer and said second type doped layer is an n-type layer.
 21. The semiconductor light emitting component of claim 16, wherein said functional structure comprises: an insulating layer formed on said first electrode using the in-situ method; a reflective layer formed on said insulating layer using the in-situ method; a seed layer formed on said reflective layer using the in-situ method; and a permanent layer formed on said seed layer using the in-situ method.
 22. The semiconductor light emitting component of claim 16, wherein said functional structure comprises: an insulating layer formed on said first electrode using the in-situ method; a reflective layer formed on said insulating layer using the in-situ method; and a permanent layer formed on said reflective layer using the in-situ method.
 23. The semiconductor light emitting component of claim 16, wherein said functional structure comprises: an insulating reflective layer formed on said first electrode using the in-situ method; and a permanent layer formed on said insulating reflective layer using the in-situ method.
 24. A light emitting component, comprising: an epitaxial structure comprising a first doped layer, a light emitting portion and a second doped layer; a first electrode formed on a surface of said first doped layer; a functional structure formed on said first electrode; a first cutout structure formed in said first doped layer to expose at least a portion of said first electrode; a second electrode formed on a surface of said second doped layer; and a second cutout structure formed in said first doped layer, said light emitting portion and said second type doped layer so as to expose at least a portion of said second electrode; wherein said light emitting component provides ultra-low shade effects.
 25. The light emitting component of claim 24, wherein said functional structure further comprises: an insulating reflective layer formed on said first electrode using the in-situ method; and a permanent layer formed on said insulating reflective layer using the in-situ method.
 26. The light emitting component of claim 25, wherein said functional structure further comprises: a reflective layer formed on said insulating layer using the in-situ method; and a seed layer formed on said reflective layer using the in-situ method. 